ACS Appl Mater Interfaces. 2022 Jun 22. doi: 10.1021/acsami.2c01460. Online ahead of print.
ABSTRACT
Conductive atomic force microscopy (C-AFM) is widely used to determine the electronic conductivity of a sample surface with nanoscale spatial resolution. However, the origin of possible artifacts has not been widely researched, hindering the accurate and reliable interpretation of C-AFM imaging results. Herein, artifact-free C-AFM is used to observe the electron conduction channels in Si-based composite anodes. The origin of a typical C-AFM artifact induced by surface morphology is investigated using a relevant statistical method that enables visualization of the contribution of artifacts in each C-AFM image. The artifact is suppressed by polishing the sample surface using a cooling cross-section polisher, which is confirmed by Pearson correlation analysis. The artifact-free C-AFM image was used to compare the current signals (before and after cycling) from two different composite anodes comprising single-walled carbon nanotubes (SWCNTs) and carbon black as conductive additives. The relationship between the electrical degradation and morphological evolution of the active materials depending on the conductive additive is discussed to explain the improved electrical and electrochemical properties of the electrode containing SWCNTs.
PMID:35731963 | DOI:10.1021/acsami.2c01460
